Spin logic enabled by current vector adder
In order to advance the silicon integrated circuit technology, researchers have been searching for memory and logic devices with new physical state variables other than charge. Spin logic device that adds one degree of freedom-electron spin to charge has been considered as a promising candidate due to its low power consumption, built-in memory, and high scalability. Here, we demonstrate that a new variable - current direction on the sample can be introduced into the spin logic operation. The current direction of the sample is considered as a vector. For the various input currents along different directions, the direction of vector sum (vector adder) determines the output and therefore can enable complex logic functions. We have realized the basic Boolean logic gates including AND, OR, NAND, NOR, and even complicated IMPLY in a single device and further constructed a full adder with only 2 devices.
Authors
- Guowei Zhou (ORCID: https://orcid.org/0000-0001-9950-4628)
- Rui Xiao (ORCID: https://orcid.org/0000-0002-4380-9542)
- Lizhu Ren (ORCID: https://orcid.org/0000-0001-7521-2006)
- Tieyang Zhao (ORCID: https://orcid.org/0000-0001-9357-3323)
- Qihan Zhang (ORCID: https://orcid.org/0009-0009-0212-4350)
- Qidong Xie (ORCID: https://orcid.org/0000-0002-8224-023X)
- Lanxin Jia (ORCID: https://orcid.org/0009-0004-9329-6396)
- Shu Shi (ORCID: https://orcid.org/0000-0003-0945-5637)
- Jinkai Wang (ORCID: https://orcid.org/0000-0002-2577-7575)
- Liang Liu (ORCID: https://orcid.org/0000-0001-8339-468X)
- Yue Zhang (ORCID: https://orcid.org/0000-0001-6893-7199)
- Tao Zeng (ORCID: https://orcid.org/0000-0002-8682-0426)
- Jingsheng Chen (ORCID: https://orcid.org/0000-0003-3188-2803)
- Youdi Gu (ORCID: https://orcid.org/0000-0003-3650-3198)
- Chenghang Zhou
- Zhenyi Zheng (ORCID: https://orcid.org/0000-0003-4099-8752)
Institutions
- Chongqing University (CN)
- National University of Singapore (SG)
- Shanghai Jiao Tong University (CN)
- Ministry of Education (RW)
- Suzhou Research Institute (CN)
- Beihang University (CN)
- Shanxi Normal University (CN)
Publication Details
- Journal
- Nature Communications
- Published
- 2025-03-27
- DOI
- https://doi.org/10.1038/s41467-025-58225-3
- Citations
- 4
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 2.92
Funders
- Ministry of Education - Singapore
- National Natural Science Foundation of China