Enhanced RF/Analog Performances of Beyond 6nm t_ox of Dual Stack Gate Dielectric GaAs based FinFET

This paper presents the comparative study of analog performance of Thin/Thick oxide GaAs based FinFET. The preliminary analysis between thick gate oxide T<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ox</inf> (6 nm) and thin gate oxide T<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ox</inf> (2 nm) shows that the thin gate oxide T<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ox</inf> (2 nm) shows better results in terms of off state current (I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</inf>), on drain current (I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf>), and on current to off current ratio (I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf>/I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</inf>) compared to the FinFET of having 6nm T<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ox</inf>. Furthermore, to observe the efficiency the drain current is plotted for different gate length for both of the (2 nm) and (6 nm) gate oxide. Moreover, analog performances are analyzed for different analog parameters such as C<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gg</inf> (total gate capacitance), C<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</inf> (gate to source capacitance), Transconductance, and Intrinsic gain and one of the most imporatant DC parameter such as threshold voltage for different gate lengths for both of the devices.