Enhancing ON Current and Electron Mobility in GaN-Based HEMTs: Integration of Advanced Materials and TCAD Simulation Approaches

Gallium nitride (GaN) has gained significant popularity in semiconductor device fabrication due to its outstanding performance: a wide band gap, high breakdown field, high electron mobility, high saturation velocity, low noise, and low thermal impedance. This has led to its adoption across various market-driven industries including high-frequency communication, RF power devices, high-power conversion, photonics, and control systems. The use of GaN devices on silicon substrates has been particularly advantageous due to the lower cost and the larger size of silicon substrates, which enhance cost-effectiveness and improve heat dissipation capabilities. Indium gallium arsenide (InGaAs) and aluminum Gallium Nitrate (AlGaN) offer superior electron mobility compared to GaN and AlGaAs These materials exhibit exceptional electrical properties and can significantly enhance the performance of HEMTs by providing higher electron mobility and faster switching speeds. Integrating these new materials results in devices that are more efficient and capable of operating at higher frequencies with lower power consumption. However, despite these advantages, GaN technology faces challenges related to certain undesirable scattering phenomena, notably the trapping effect. This work focuses on improving the ON current and mobility of electrons in HEMT through simulation.