Investigation of Heterostructure Vertical HEMTs for Drain Current Improvement

This research project aims to explore how different combinations of heterostructure materials impact the drain current of Vertical HEMTs through simulation software. Improving the performance of electronic devices requires optimizing the drain current in Vertical High Electron Mobility Transistors (HEMTs). This project uses TCAD simulation software to examine how different heterostructure material combinations affect the drain current of Vertical HEMTs. The paper investigates three distinct material combinations: InAlN/GaN, GaN /AlGaN, and InAlN /InGaN. The objective is to determine which combination of materials produces the most considerable drain current by examining and contrasting the drain current values for every heterostructure. The results are anticipated to shed light on the best material combinations for improving Vertical HEMT performance, which could lead to higher-performing and more efficient electronic devices.