Enhancing AlGaN/GaN MOSHEMT functionality through strategic Al₂O₃ and AlN layer engineering

The AC/DC performance of AlGaN/GaN MOSHEMT using Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> as an oxide layer for varying AlN spacer layer thicknesses is examined. The simulation results show that the AlN spacer with a thickness of 1 nm outperforms spacers with thicknesses of 0.5, 1.5, and 2 nm in terms of transconductance and drain current. The quantum well depth and mobility behavior for different AlN spacer layer thicknesses were also observed to optimize the device performance. However, at a 2 nm AlN spacer layer thickness, the gate capacitance is significantly lower, resulting in a slightly higher cutoff frequency. These results revealed that different spacer layer thicknesses can affect the device’s properties and provide insights for improving the device’s performance. The device engineers can use these devices according to their specific application requirements.