An Improved 2D Method of Moments for the Capacitance Calculation of Round Conductors With Insulation Layers

Capacitance plays a crucial role in high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\boldsymbol{dv/dt}$</tex-math></inline-formula> situations, making the accurate estimation of parasitic capacitance essential. This paper introduces an improved method of moments (MoM) for calculating the capacitance of round conductors, with or without insulation layers. The proposed method combines MoM with an analytical solution based on Laplace's equation. Compared to the original MoM, the proposed method does not require consideration of polarization charges on the surface of the insulation layer, which reduces the matrix size. Additionally, the proposed method can provide asymptotic formulas for capacitance calculation. The proposed method is compared with the 2D finite-element method (FEM), MoM and measurements. The results demonstrate that the proposed method aligns well with both the FEM simulations and the actual measurements. The proposed method uses less than half the time to calculate the same cases compared to the original MoM.