<i>In situ</i> growth of Cu-doped MoS <sub>2</sub> thin films <i>via</i> a laser-induced technique: efficient P-type doping and effective enhancement of the FET device performance
A novel in situ doping technique was proposed, wherein copper (Cu) was successfully doped into MoS 2 thin films as a p-type doping acceptor using pulsed laser-induced technology. The growth and doping processes were simultaneously completed.
Authors
- Yishuo Hu (ORCID: https://orcid.org/0000-0003-2050-8373)
- Wanli Yang (ORCID: https://orcid.org/0000-0003-0666-8063)
- Yufei Yang (ORCID: https://orcid.org/0009-0007-9402-8889)
- Bo Wei (ORCID: https://orcid.org/0000-0002-4953-3049)
- Zhiqi Wen (ORCID: https://orcid.org/0000-0002-9183-7601)
- Wenhao Zhang (ORCID: https://orcid.org/0000-0003-2386-0305)
- Peng Yu (ORCID: https://orcid.org/0000-0003-4005-3791)
- Huaicheng Deng
- Yuantai Hu (ORCID: https://orcid.org/0000-0003-3365-4564)
- Zhuocheng Gan
- Leqi Qiu
- Shijiao Hu
- Xiangbin Zeng
Institutions
- Wenzhou University (CN)
- Shanghai Hospital Development Center (CN)
- Huazhong University of Science and Technology (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d4tc05131a
- Citations
- 5
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 2.59