Field-plate engineered nano-AlN/<i>β</i>-Ga₂O₃ MOSHEMTs for high frequency and high efficiency power applications

Abstract This paper presents an optimized design for conventional non-field plate and field plate AlN/ β -Ga 2 O 3 metal oxide semiconductor high electron mobility transistor (MOSHEMT). The transparent β -Ga 2 O 3 with ultra wide bandgap, is crucial to enhance the performance and efficiency of the proposed device design. This property positions it as a strong contender to replace GaN and SiC in high power applications. A comparative analysis of AlN/ β -Ga 2 O 3 MOSHEMTs with and without field plates revealed significant variations in key device parameters for power and linearity. The wide bandgaps of AlN and β -Ga 2 O 3 , combined with the strong polarization of AlN, make this material system attractive for high power electronic devices. The FP-MOSHEMT exhibits high cut off frequency and remarkable DC, RF and linearity characteristics, backed up by a notable two dimensional electron gas density, n s of 10 13 cm -2 . Output power 25.36 dBm and gain 14.39 dB is observed for the device. The proposed device with field plate exhibits a remarkable power added efficiency of 49.5%. In-depth simulations were employed to comprehensively assess the system’s linearity performance. The evaluation encompassed transconductance behavior and high order derivatives (up to the third order). Key linearity parameters, VIP2, VIP3, IIP3, and IMD3, were carefully studied. Additionally, the distortion parameters HD2 and HD3 were analyzed, which demonstrated an increase in dynamic range and a reduction of interference. The findings indicate potential of AlN/ β -Ga 2 O 3 MOSHEMTs for power device applications, owing to their notably robust linearity performance.