Active Thermal Control Algorithm for Si/SiC Hybrid Switch-Based Energy Storage Converter
This article proposed an active thermal control algorithm for the Si IGBT and SiC MOSFET hybrid switch (Si/SiC HyS). The thermal unbalance phenomenon of the Si/SiC HyS is illustrated in this paper. The different switching patterns and corresponding loss distribution characteristics and unbalanced device junction temperature distribution are analyzed. In order to conduct the research on active regulation of device junction temperatures, the therm al model of an energy storage Si/SiC HyS based converter is built. Different combinations of Si/SiC HyS switching patterns are analyzed and an active thermal control algorithm is proposed based on the switching pattern combination control. The effectiveness of the proposed algorithm is validated by simulation. It shows that by using the proposed algorithm, the thermal stress on SiC MOSFET device junction can be relieved, which can increase the device long term reliability and maximum output power capacity. The trade-off between efficiency and SiC MOSFET junction temperature is also presented in this paper.
Authors
- Jianying Zhong
- Xiao Li (ORCID: https://orcid.org/0000-0002-3553-9677)
- Minhua Qian
- Haichen Liu (ORCID: https://orcid.org/0000-0002-5175-2881)
- Yang Li (ORCID: https://orcid.org/0000-0001-8286-3392)
- Jingkuan Guo
Institutions
- System Equipment (China) (CN)
Publication Details
- Published
- 2024-12-13
- DOI
- https://doi.org/10.1109/icpe64565.2024.10929308
- Citations
- 1
- Primary Topic
- Multilevel Inverters and Converters
- Type
- article
- Field-Weighted Citation Impact
- 0.21