Optimization of GaN HEMT Bridge Topology for Crosstalk Problems

With the development of third-generation wide-band semiconductor technology, GaN devices are more and more widely used in the field of power electronics due to their high electron mobility and low on-resistance.GaN devices have lower on-voltage and smaller junction capacitance, so their switching dynamics are affected by the influence of the parasitic parameters, which causes the deadband crosstalk problem in the application of half-bridge circuits. In this paper, GaN-based bridge crosstalk problems are summarized as follows. In this paper, based on the bridge equivalent parasitic circuit of GaN, we introduce the influence of parasitic parameters on the switching process of GaN devices, analyze the reasons for the generation of deadband crosstalk, and propose optimization strategies. From the drive layout level, the drive circuit parasitic inductance is reduced. Finally, the effectiveness of the proposed strategies is verified by a double-pulse experimental platform.