Enhancement of thermoelectric properties of Ag<sub>2</sub>Te semiconductors through In-doping induced resonant levels and multi-valley degeneracy
Indium doping increased the carrier concentration and introduced resonant levels and multi-valley degeneracy in the energy band, improving the Seebeck coefficient and significantly enhancing the power factor of Ag 2− x In x Te samples.
Authors
- Pengcheng Zhai (ORCID: https://orcid.org/0000-0001-9962-6764)
- Bo Duan (ORCID: https://orcid.org/0000-0003-0536-843X)
- Zhongtao Lu
- Chenyang Xiao
- Guodong Li (ORCID: https://orcid.org/0000-0002-4761-6991)
- Qingjie Zhang (ORCID: https://orcid.org/0000-0002-8431-0932)
- Xiaobin Feng
- Kailiang Fang
- Zhuoming Xia
Institutions
- Wuhan University of Technology (CN)
Publication Details
- Journal
- Journal of Materials Chemistry A
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d4ta09018g
- Citations
- 3
- Primary Topic
- Advanced Thermoelectric Materials and Devices
- Type
- article
- Field-Weighted Citation Impact
- 1.55
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Hubei Province
- Fundamental Research Funds for the Central Universities