Non-Cadmium TiO<sub>2</sub>/Sb<sub><b>2</b></sub>(Se, S)<sub><b>3</b></sub> Heterojunction Solar Cells with Improved Efficiency by NaCl-Treated Interface Engineering
Cadmium sulfide (CdS) is widely employed as the electron transport layer due to its ability to form dense films in the fabrication of antimony selenosulfide (Sb<sub>2</sub>(S, Se)<sub>3</sub>) solar cells. However, it presents significant drawbacks: its toxicity poses environmental risks, and its narrow bandgap restricts the collection of higher-energy carriers. Titanium dioxide (TiO<sub>2</sub>) stands out as a viable and environmentally friendly alternative, offering features, such as high optical transparency, excellent stability, and nontoxic characteristics, making it highly suitable for application in Sb<sub>2</sub>(S, Se)<sub>3</sub> thin-film solar cells. In our study, we employed a sodium chloride (NaCl) solution treatment to enhance the quality of TiO<sub>2</sub> films grown via the chemical bath deposition (CBD) method. The Na ions introduced during postannealing play a pivotal role in optimizing the interface between the TiO<sub>2</sub> and Sb<sub>2</sub>(S, Se)<sub>3</sub> layers. This treatment enhances the bandgap of the TiO<sub>2</sub> layer, improving electronic coupling at the p-n junction. This process significantly boosts device performance, including the short-circuit current density (<i>J</i><sub>SC</sub>) and open-circuit voltage (<i>V</i><sub>OC</sub>). As a result, the power conversion efficiency (PCE) of the TiO<sub>2</sub>/Sb<sub>2</sub>(S, Se)<sub>3</sub> heterojunction solar cells improved remarkably from 2.3% to 5.5%. The novel approach highlights the effectiveness of wide-bandgap TiO<sub>2</sub> buffer layers in advancing Sb<sub>2</sub>(S, Se)<sub>3</sub> solar cells. By overcoming the limitations of traditional CdS layers and integrating Na ion-enhanced TiO<sub>2</sub> films, this study demonstrates a promising route for achieving high-efficiency and environmentally sustainable solar cells.
Authors
- Panpan Yang (ORCID: https://orcid.org/0000-0002-7632-279X)
- Shaoqiang Chen (ORCID: https://orcid.org/0000-0002-0458-3894)
- Guoen Weng (ORCID: https://orcid.org/0000-0001-7786-2133)
- Deyang Qin
- Jiahua Tao (ORCID: https://orcid.org/0000-0003-4363-4161)
- Hidefumi Akiyama (ORCID: https://orcid.org/0000-0002-4654-8552)
- Junhao Chu
- Yuxin Pan (ORCID: https://orcid.org/0009-0007-4880-5990)
- Youyang Wang (ORCID: https://orcid.org/0000-0003-0107-4530)
- Yanlin Pan (ORCID: https://orcid.org/0000-0003-0227-6978)
- Xiaobo Hu (ORCID: https://orcid.org/0000-0002-0931-1337)
Institutions
- Nanjing University of Science and Technology (CN)
- Nanophoton (Brazil) (BR)
- East China Normal University (CN)
- The University of Tokyo (JP)
Publication Details
- Journal
- ACS Applied Materials & Interfaces
- Published
- 2025-03-26
- DOI
- https://doi.org/10.1021/acsami.5c01290
- Citations
- 5
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 3.65