Snapshot angle-resolved channeled spectroscopic micro-ellipsometry for thin-film characterization

We present an angle-resolved channeled spectroscopic micro-ellipsometry (ACSE) system operating in a near-normal-incidence configuration with a line-scan spectrometer. The hardware covers the visible spectral range from 480 to 680 nm and provides incidence angles from 0° to 60°. By analyzing the spectral interference envelope, we accurately separate and extract the low-frequency (DC) and high-frequency (AC) components of the interferometric signal, corresponding to the baseline intensity and modulation, respectively. Moreover, we employ a Hilbert transform to analyze and calibrate spectral amplitude and phase errors, thereby improving the precision of the retrieved ellipsometric parameters. To validate the proposed method, we measured <i>S</i><i>i</i><i>O</i><sub>2</sub> thin films deposited on a Si wafer with thicknesses spanning from 10 to 1500 nm and successfully determined both thickness and refractive index values, which were confirmed by comparing them with those obtained using a commercial ellipsometer.

Authors

Publication Details

Journal
Applied Optics
Published
2025-03-26
DOI
https://doi.org/10.1364/ao.558576
Citations
2
Primary Topic
Optical Coatings and Gratings
Type
article
Field-Weighted Citation Impact
1.32
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article

Snapshot angle-resolved channeled spectroscopic micro-ellipsometry for thin-film characterization

S.J. Lee, Youngjoon Kim, Heui Jae Pahk
2 citations
Applied Optics
Optical Coatings and Gratings
1.32
article

Snapshot angle-resolved channeled spectroscopic micro-ellipsometry for thin-film characterization

S.J. Lee, Youngjoon Kim, Heui Jae Pahk
article en
2 citations

Abstract

We present an angle-resolved channeled spectroscopic micro-ellipsometry (ACSE) system operating in a near-normal-incidence configuration with a line-scan spectrometer. The hardware covers the visible spectral range from 480 to 680 nm and provides incidence angles from 0° to 60°. By analyzing the spectral interference envelope, we accurately separate and extract the low-frequency (DC) and high-frequency (AC) components of the interferometric signal, corresponding to the baseline intensity and modulation, respectively. Moreover, we employ a Hilbert transform to analyze and calibrate spectral amplitude and phase errors, thereby improving the precision of the retrieved ellipsometric parameters. To validate the proposed method, we measured <i>S</i><i>i</i><i>O</i><sub>2</sub> thin films deposited on a Si wafer with thicknesses spanning from 10 to 1500 nm and successfully determined both thickness and refractive index values, which were confirmed by comparing them with those obtained using a commercial ellipsometer.

Applied OpticsVol. 64(12)
Openalex Percentile: Top 22%
Optical Coatings and Gratings
1.32
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