Computational Discovery of Novel Chalcogenide Perovskites YbMX3 (M = Zr, Hf; X = S, Se) for Optoelectronics

Chalcogenide perovskites have shown great potential for photovoltaic applications. Most researchers have begun to pay close attention to the crystal synthesis, phase stability, and optoelectronic properties of chalcogenide perovskites AMX<sub>3</sub> (A = Ca, Sr, Ba; M = Ti, Zr, Hf, Sn; X = S, Se). At present, the A-site metal cations are mainly limited to alkaline earth metal cations in the literature. The replacement of the alkaline earth metal cations by Yb<sup>2+</sup> is proposed as an alternative for chalcogenide perovskites. In this study, the phase stability, and mechanical, electronic, optical, and photovoltaic properties of novel chalcogenides YbMX<sub>3</sub> (M = Zr, Hf; X = S, Se) are theoretically evaluated in detail for the first time. It is mentioned that YbZrS<sub>3</sub> and YbHfS<sub>3</sub> are marginally thermodynamically stable while YbZrSe<sub>3</sub> and YbHfSe<sub>3</sub> exhibit superior phase stability against decomposition. Good mechanical and dynamical stability of these chalcogenide perovskites are verified, and they are all ductile materials. The accurate electronic structure calculations suggest that the predicted direct bandgap of YbMSe<sub>3</sub> (M = Zr, Hf) is within 1.3-1.7 eV. Additionally, the small effective mass and low exciton binding energy of YbMSe<sub>3</sub> (M = Zr, Hf) are favorable for their photovoltaic applications. However, YbZrS<sub>3</sub> and YbHfS<sub>3</sub> show larger direct band gaps with a change from 1.92 to 2.27 eV. The optical and photovoltaic properties of these compounds are thoroughly studied. In accordance with their band gaps, YbZrSe<sub>3</sub> and YbHfSe<sub>3</sub> are discovered to exhibit high visible-light absorption coefficients. The maximum conversion efficiency analysis shows that YbMSe<sub>3</sub> (M = Zr, Hf) can achieve an excellent efficiency, especially for YbZrSe<sub>3</sub>, whose efficiency can reach ~32% in a film thickness of 1 μm. Overall, our study uncovers that YbZrSe<sub>3</sub> is an ideal stable photovoltaic material with a high efficiency comparable to those of lead-based halide perovskites.

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Journal
Molecules
Published
2025-03-26
DOI
https://doi.org/10.3390/molecules30071468
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
0.00

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article

Computational Discovery of Novel Chalcogenide Perovskites YbMX3 (M = Zr, Hf; X = S, Se) for Optoelectronics

Rongjian Sa, Helong Wu, Qingyu Li, Jiming Zhang et al.
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Molecules
Perovskite Materials and Applications
article

Computational Discovery of Novel Chalcogenide Perovskites YbMX3 (M = Zr, Hf; X = S, Se) for Optoelectronics

Rongjian Sa, Helong Wu, Qingyu Li, Jiming Zhang, Weiguo Li
article en

Abstract

Chalcogenide perovskites have shown great potential for photovoltaic applications. Most researchers have begun to pay close attention to the crystal synthesis, phase stability, and optoelectronic properties of chalcogenide perovskites AMX<sub>3</sub> (A = Ca, Sr, Ba; M = Ti, Zr, Hf, Sn; X = S, Se). At present, the A-site metal cations are mainly limited to alkaline earth metal cations in the literature. The replacement of the alkaline earth metal cations by Yb<sup>2+</sup> is proposed as an alternative for chalcogenide perovskites. In this study, the phase stability, and mechanical, electronic, optical, and photovoltaic properties of novel chalcogenides YbMX<sub>3</sub> (M = Zr, Hf; X = S, Se) are theoretically evaluated in detail for the first time. It is mentioned that YbZrS<sub>3</sub> and YbHfS<sub>3</sub> are marginally thermodynamically stable while YbZrSe<sub>3</sub> and YbHfSe<sub>3</sub> exhibit superior phase stability against decomposition. Good mechanical and dynamical stability of these chalcogenide perovskites are verified, and they are all ductile materials. The accurate electronic structure calculations suggest that the predicted direct bandgap of YbMSe<sub>3</sub> (M = Zr, Hf) is within 1.3-1.7 eV. Additionally, the small effective mass and low exciton binding energy of YbMSe<sub>3</sub> (M = Zr, Hf) are favorable for their photovoltaic applications. However, YbZrS<sub>3</sub> and YbHfS<sub>3</sub> show larger direct band gaps with a change from 1.92 to 2.27 eV. The optical and photovoltaic properties of these compounds are thoroughly studied. In accordance with their band gaps, YbZrSe<sub>3</sub> and YbHfSe<sub>3</sub> are discovered to exhibit high visible-light absorption coefficients. The maximum conversion efficiency analysis shows that YbMSe<sub>3</sub> (M = Zr, Hf) can achieve an excellent efficiency, especially for YbZrSe<sub>3</sub>, whose efficiency can reach ~32% in a film thickness of 1 μm. Overall, our study uncovers that YbZrSe<sub>3</sub> is an ideal stable photovoltaic material with a high efficiency comparable to those of lead-based halide perovskites.

MoleculesVol. 30(7)
Fujian Normal University (CN), Minjiang University (CN)
Minjiang University
Affordable and clean energy
Openalex Percentile: Top 95%
Perovskite Materials and Applications
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