An Adaptive Trinary Read/Write Circuit Based on Digital Memristors

Memristors offer a viable solution to the memory wall and power wall issues, and are regarded as the most promising non-volatile memory device for research purposes. Nonetheless, read/write circuits, which support the most basic read-write function of a memristor, have not been adequately studied before. In this paper, we proposed an adaptive trinary read/write circuit for the digital memristors based on 180nm standard CMOS process. The selection of digital memristors can effectively avoid the issue of state offset and exhibit greater anti-interference performance to small signal. By adding differentiator, the write circuit is capable of adaptively recognizing the set process of digital memristors, making itself flexible to write memristors with different thresholds. Meanwhile, the read circuit employs three amplifiers to incrementally amplify the voltage, with the three output ports serving to independently represent the three resistive states, thereby providing support for the envisaged trinary system. We construct circuits using actual process libraries, which brings the memristor multi-level read/write circuits closer to practical use. which facilitates the practical implementation of memristor multi-level read/write circuits.