Growth of AA-Stacked MoS₂ for High Responsivity Photodetectors

Stacked structures are pivotal in exploring physical properties like superconductivity and interlayer excitons, serving as the foundation for tuning the characteristics of layered materials. However, achieving simple and uniform preparation of these structures remains a significant challenge. In this study, we delved into the correlations between layer number, orientation, and growth duration, ultimately achieving AA-bilayer-stacked MoS2 films comprising over half the total proportion through the incorporation of NaCl molecules in a confined space. Furthermore, our investigation of gate-tuned MoS2 phototransistors revealed a marked influence of stacking configuration on photoresponsivity. Notably, the bilayer-stacked MoS2 phototransistor exhibited a high photoresponsivity of 32 A/W under an optical power intensity of 0.1 mW/cm². This approach makes a substantial contribution to advancing research on few-layer MoS2, paving the way for its application in tunable photodetectors.