Outside Front Cover: Low Temperature Atomic Layer Deposition of (00l)‐Oriented Elemental Bismuth (Angew. Chem. Int. Ed. 15/2025)

The first successful growth of elemental bismuth (Bi) thin films via thermal atomic layer deposition (ALD) using Bi(NMe2)3 and Sb(SiMe3)3 is reported by Kornelius Nielsch, Amin Bahrami et al. in their Research Article (e202422578) As depicted on the cover picture, the films evolve from island formation to full coverage, accompanied by a preferential growth shift from the (012) to the (003) plane. The resulting films exhibit semimetallic behavior with a resistivity of approximately 200 µΩ·cm. Artwork by the team of INMYWORK Studio.

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Publication Details

Journal
Angewandte Chemie International Edition
Published
2025-03-25
DOI
https://doi.org/10.1002/anie.202506105
Citations
1
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.73
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article

Outside Front Cover: Low Temperature Atomic Layer Deposition of (00l)‐Oriented Elemental Bismuth (Angew. Chem. Int. Ed. 15/2025)

Panpan Zhao, Kornelius Nielsch, Annalisa Acquesta, Filip Bureš et al.
1 citations
Angewandte Chemie International Edition
Semiconductor materials and devices
0.73
article

Outside Front Cover: Low Temperature Atomic Layer Deposition of (00l)‐Oriented Elemental Bismuth (Angew. Chem. Int. Ed. 15/2025)

Panpan Zhao, Kornelius Nielsch, Annalisa Acquesta, Filip Bureš, Antonio Amoroso, Nicolás Pérez, Jaroslav Charvot, Sebastian Lehmann, Jun Yang, Amin Bahrami, Jorge Luis Vázquez Arce, Fabian Pieck, Anjana Devi, Yana Vaynzof, D. Hansen, Ralf Tonner Zech, Angelika Wrzesińska Lashkova
article en
1 citations

Abstract

The first successful growth of elemental bismuth (Bi) thin films via thermal atomic layer deposition (ALD) using Bi(NMe2)3 and Sb(SiMe3)3 is reported by Kornelius Nielsch, Amin Bahrami et al. in their Research Article (e202422578) As depicted on the cover picture, the films evolve from island formation to full coverage, accompanied by a preferential growth shift from the (012) to the (003) plane. The resulting films exhibit semimetallic behavior with a resistivity of approximately 200 µΩ·cm. Artwork by the team of INMYWORK Studio.

Angewandte Chemie International EditionVol. 64(15)
University of Pardubice (CZ), Leibniz Institute for Solid State and Materials Research (DE), University of Naples Federico II (IT), Technische Universität Dresden (DE), Ruhr University Bochum (DE), Leipzig University (DE)
Openalex Percentile: Top 30%
Semiconductor materials and devices
0.73
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