Ligand-driven facet control of InAs-based quantum dots for enhanced near- and shortwave infrared emission
InAs-based quantum dots (QDs) are promising heavy-metal-free semiconductors for infrared emission technologies, offering tunable bandgaps via quantum confinement and excellent charge-carrier transport properties.
Authors
- Y. Park (ORCID: https://orcid.org/0000-0002-9291-2706)
- Whi Dong Kim (ORCID: https://orcid.org/0000-0003-2567-1719)
- Hyunjin Cho (ORCID: https://orcid.org/0000-0002-2161-4891)
- Hyung‐Kyu Lim (ORCID: https://orcid.org/0000-0002-2403-2766)
- Ju Young Woo (ORCID: https://orcid.org/0000-0001-5885-113X)
- Yu‐Jin Kim (ORCID: https://orcid.org/0000-0003-2562-615X)
- Doh Chang Lee (ORCID: https://orcid.org/0000-0002-3489-6189)
Institutions
- Los Alamos National Laboratory (US)
- Korea Advanced Institute of Science and Technology (KR)
- Kangwon National University (KR)
- Hanyang University (KR)
- Chung-Ang University (KR)
- Korea Institute of Industrial Technology (KR)
Publication Details
- Journal
- Inorganic Chemistry Frontiers
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5qi00142k
- Citations
- 3
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 3.74
Funders
- National Research Foundation
- National Research Foundation of Korea
- Korea Evaluation Institute of Industrial Technology