Thermoelectric Performance of Janus Monolayer ZnGeSTe from First-Principles Based Self-Consistent Transport Theory

Thermal and electrical transport properties of Janus monolayer ZnGeSTe are investigated using first-principles-based self-consistent transport theory. The temperature-driven phonon dispersion and lattice thermal conductivity (κl) are evaluated up to the quartic anharmonicity, and consequently, the κl is reduced by 42.36% upon quartic anharmonicity at room temperature. The Seebeck coefficient (S), electrical conductivity (σ), and carrier thermal conductivity (κe) are calculated by considering individual carrier lifetimes, and consequently, due to the convergence and dispersion of multiple conduction bands, the large Seebeck coefficient (S) and the high electron mobility contribute to a higher power factor (PF = S2σ) for n-type doping. The optimal figure of merit (zT = PF/(κe + κl)) monotonically increases with the temperature, and the peak and average zT values are up to 1.16 and 0.79 in the operating temperature range of 500–800 K for n-type doping.

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Publication Details

Journal
The Journal of Physical Chemistry C
Published
2025-03-25
DOI
https://doi.org/10.1021/acs.jpcc.4c08445
Citations
3
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
1.55

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article

Thermoelectric Performance of Janus Monolayer ZnGeSTe from First-Principles Based Self-Consistent Transport Theory

Hongkuan Yuan, Xiaoqiang Cai, Xuelian He, Hong Chen
3 citations
The Journal of Physical Chemistry C
Advanced Thermoelectric Materials and Devices
1.55
article

Thermoelectric Performance of Janus Monolayer ZnGeSTe from First-Principles Based Self-Consistent Transport Theory

Hongkuan Yuan, Xiaoqiang Cai, Xuelian He, Hong Chen
article en
3 citations

Abstract

Thermal and electrical transport properties of Janus monolayer ZnGeSTe are investigated using first-principles-based self-consistent transport theory. The temperature-driven phonon dispersion and lattice thermal conductivity (κl) are evaluated up to the quartic anharmonicity, and consequently, the κl is reduced by 42.36% upon quartic anharmonicity at room temperature. The Seebeck coefficient (S), electrical conductivity (σ), and carrier thermal conductivity (κe) are calculated by considering individual carrier lifetimes, and consequently, due to the convergence and dispersion of multiple conduction bands, the large Seebeck coefficient (S) and the high electron mobility contribute to a higher power factor (PF = S2σ) for n-type doping. The optimal figure of merit (zT = PF/(κe + κl)) monotonically increases with the temperature, and the peak and average zT values are up to 1.16 and 0.79 in the operating temperature range of 500–800 K for n-type doping.

The Journal of Physical Chemistry CVol. 129(14)
Southwest University (CN)
National Natural Science Foundation of China
Openalex Percentile: Top 19%
Advanced Thermoelectric Materials and Devices
1.55
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