A 0.014%/V LS and -73.5 dB PSRR 5-T voltage reference with enhanced self regulation

This paper proposes a 5-transistor (5-T) voltage reference (VR) with enhanced self regulation for low-voltage and low-power applications. In the proposed circuit, the gate feedback with the source degeneration is applied to a transistor to form the enhanced self regulation to reduce the impact of the supply voltage (VDD) on the reference voltage (VREF). Moreover, a stacked gate-source connected transistor further increases the impedance from the VDD to ground. In this way, both line sensitivity (LS) and power supply rejection ratio (PSRR) can be improved without any additional current overhead. The proposed VR is fabricated in a 0.18 μm CMOS process, while 10 samples have been measured. It can provide a VREF of 387.1 mV and consume a power consumption of 50.4 pW at 27°C. The results show that the average LS reaches 0.014%/V when the VDD varies from 0.6 V to 5 V. Additionally, the PSRR is -73.5 dB and -49.4 dB at 10 Hz and 100 Hz respectively. The average temperature coefficient (TC) is 80.8 ppm/°C without any trimming from 0°C to 100°C. The total area of the proposed VR is only 0.0038 mm2.

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Publication Details

Journal
IEICE Electronics Express
Published
2025-03-25
DOI
https://doi.org/10.1587/elex.22.20250091
Primary Topic
Analog and Mixed-Signal Circuit Design
Type
article
Field-Weighted Citation Impact
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article

A 0.014%/V LS and -73.5 dB PSRR 5-T voltage reference with enhanced self regulation

Kai Yu, Youjun Deng, Sizhen Li
IEICE Electronics Express
Analog and Mixed-Signal Circuit Design
article

A 0.014%/V LS and -73.5 dB PSRR 5-T voltage reference with enhanced self regulation

Kai Yu, Youjun Deng, Sizhen Li
article en

Abstract

This paper proposes a 5-transistor (5-T) voltage reference (VR) with enhanced self regulation for low-voltage and low-power applications. In the proposed circuit, the gate feedback with the source degeneration is applied to a transistor to form the enhanced self regulation to reduce the impact of the supply voltage (VDD) on the reference voltage (VREF). Moreover, a stacked gate-source connected transistor further increases the impedance from the VDD to ground. In this way, both line sensitivity (LS) and power supply rejection ratio (PSRR) can be improved without any additional current overhead. The proposed VR is fabricated in a 0.18 μm CMOS process, while 10 samples have been measured. It can provide a VREF of 387.1 mV and consume a power consumption of 50.4 pW at 27°C. The results show that the average LS reaches 0.014%/V when the VDD varies from 0.6 V to 5 V. Additionally, the PSRR is -73.5 dB and -49.4 dB at 10 Hz and 100 Hz respectively. The average temperature coefficient (TC) is 80.8 ppm/°C without any trimming from 0°C to 100°C. The total area of the proposed VR is only 0.0038 mm2.

IEICE Electronics ExpressVol. 22(9)
Guangdong University of Technology (CN)
Affordable and clean energy
Openalex Percentile: Top 95%
Analog and Mixed-Signal Circuit Design
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