Anisotropic Role on Zinc Oxide (ZnO) Thin Film Growth Processes of Solution-Dependent Novel Electrostatic Spray Deposition (ESD)

This study systematically investigated an anisotropic correlation on structural properties (STP) for the 0.005 M (m/l) and 0.015 M (m/l) hydrochloric acid (HCl) effect on the ZnO growth mechanism, using the solution-dependent novel ESD technique across a range of temperatures with varying the volumes of deionized water (H2O). For ZnO thin film recitation, zinc chloride (ZnCl2) has been used as a precursor and dissolves it in ethanol (CH3CH2OH) at a concentration of 0.1 M to create a zinc complex molecule. X-ray diffraction (XRD) images confirmed that the ZnO nanoparticles exhibited a clean wurtzite crystal structure. Additionally, Bragg’s law and the Debye-Scherrer (D-S) methods were utilized for the detailed microlevel investigation, namely, lattice parameters and lattice crystallite. The STP result analysis disclosed the existence of an anisotropic countenance, which correlates with the excessive presence of leaving group (OH-) compounds within the framework of ESD. The consequences also provided insight into how to develop an oxide-based crystal semiconductor that is economically viable for industrial and commercial applications of ESD-deposited highly efficient semiconductor technology devices, specifically the growth mechanism for ZnO.