Growth and characterization of a 2-inch (102) plane β-Ga <sub>2</sub> O <sub>3</sub> crystal <i>via</i> the edge-defined film-fed growth method
This study reports the first successful growth of a 2-inch (1̄02) plane β-Ga 2 O 3 crystal via the EFG method and provides a series of characterizations that highlight the (1̄02) plane as a promising substrate for vertical structure power devices.
Authors
- Zhucheng Li
- Zhitai Jia (ORCID: https://orcid.org/0000-0002-6857-847X)
- Wenxiang Mu (ORCID: https://orcid.org/0000-0002-6844-7808)
- Xutang Tao (ORCID: https://orcid.org/0000-0001-7664-7503)
- B. X. Yu
- Jin Zhang (ORCID: https://orcid.org/0000-0001-7830-3464)
- Yiyuan Liu (ORCID: https://orcid.org/0000-0002-7022-6422)
- Yue Dong
- Boyang Chen
Institutions
- Shandong University (CN)
Publication Details
- Journal
- CrystEngComm
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d4ce01282h
- Citations
- 2
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.85