Synergistic crucible design and thermal-flow management for enhanced 4-inch AlN single crystal PVT growth: a combined numerical and experimental investigation
By optimizing the thermal field position, crucible microstructure, and thermal flow field coupling, a 4-inch aluminum nitride single crystal with excellent growth uniformity was successfully fabricated.
Authors
- Baikui Li (ORCID: https://orcid.org/0000-0002-3118-5488)
- Honglei Wu (ORCID: https://orcid.org/0000-0002-8852-3951)
- G. He (ORCID: https://orcid.org/0000-0003-3396-794X)
- Yingmin Wang (ORCID: https://orcid.org/0000-0002-2850-0336)
- Zhenhua Sun (ORCID: https://orcid.org/0000-0002-9227-6738)
- Qian Liu (ORCID: https://orcid.org/0000-0001-8525-7961)
- Wenliang Li (ORCID: https://orcid.org/0000-0002-0864-0358)
- Jun Tan
Institutions
- Shenzhen University (CN)
- China Electronics Technology Group Corporation (CN)
Publication Details
- Journal
- CrystEngComm
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5ce00214a
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00