400 GHz 8×1 Transmitter and Receiver Front-Ends With Metastructured On-Chip Antennas

This article highlights two 8×1 transmitter and receiver front-ends, which are individually composed of two inparallel assembled four-channel submillimeter-wave monolithic integrated circuits (S-MMICs) operating at 400 GHz. These S-MMICs integrate frequency multipliers, mixers, and amplifiers as well as on-chip antennas. They are manufactured on a 35 nm metamorphic high-electron-mobility transistor technology. The included to-the-broadside radiating on-chip antennas allowed for simplified assembly on a printed circuit board upon which two 4×1 transmitter or receiver S-MMICs are placed in parallel. Furthermore, a separate multiplier-by-four is integrated allowing for a low-frequency input drive in the range of 22.50 to 26.25 GHz. The operational frequency range of the front-ends is from 360 to 420 GHz. Both on-wafer and front-end level measurements are shown, including the farfield pattern characterization of the respective metastructure-based on-chip antennas. With all eight channels of the transmitter front-end active, a radiated output power of at least 10 mW is achieved for the frequency range from 390 to 420 GHz setting the state-of-the-art.

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Publication Details

Journal
IEEE Transactions on Terahertz Science and Technology
Published
2025-03-24
DOI
https://doi.org/10.1109/tthz.2025.3554724
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
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article

400 GHz 8×1 Transmitter and Receiver Front-Ends With Metastructured On-Chip Antennas

Arnulf Leuther, R. Quay, Philipp Neininger, M. Kuri et al.
IEEE Transactions on Terahertz Science and Technology
Radio Frequency Integrated Circuit Design
article

400 GHz 8×1 Transmitter and Receiver Front-Ends With Metastructured On-Chip Antennas

Arnulf Leuther, R. Quay, Philipp Neininger, M. Kuri, A. Tessmann, Bersant Gashi, Marius Kretschmann, Sandrine Wagner, Rainer Weber, Steffen Wälde, Lucas Tetzel
article en

Abstract

This article highlights two 8×1 transmitter and receiver front-ends, which are individually composed of two inparallel assembled four-channel submillimeter-wave monolithic integrated circuits (S-MMICs) operating at 400 GHz. These S-MMICs integrate frequency multipliers, mixers, and amplifiers as well as on-chip antennas. They are manufactured on a 35 nm metamorphic high-electron-mobility transistor technology. The included to-the-broadside radiating on-chip antennas allowed for simplified assembly on a printed circuit board upon which two 4×1 transmitter or receiver S-MMICs are placed in parallel. Furthermore, a separate multiplier-by-four is integrated allowing for a low-frequency input drive in the range of 22.50 to 26.25 GHz. The operational frequency range of the front-ends is from 360 to 420 GHz. Both on-wafer and front-end level measurements are shown, including the farfield pattern characterization of the respective metastructure-based on-chip antennas. With all eight channels of the transmitter front-end active, a radiated output power of at least 10 mW is achieved for the frequency range from 390 to 420 GHz setting the state-of-the-art.

IEEE Transactions on Terahertz Science and TechnologyVol. 15(4)
Karlsruhe Institute of Technology (DE), University of Freiburg (DE), Grieshaber (Germany) (DE), Fraunhofer Institute for Applied Solid State Physics (DE)
Affordable and clean energy
Openalex Percentile: Top 95%
Radio Frequency Integrated Circuit Design
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