Impact of Geometry on Chemical Analysis Exemplified for Photoelectron Spectroscopy of Black Silicon

For smooth surfaces, chemical composition can be readily analyzed using various spectroscopic techniques, a prominent example is X-ray photoelectron spectroscopy (XPS), where the relative proportions of the elements are mainly determined by the intensity ratio of the element-specific photoelectrons. However, this analysis becomes more complex for nanorough surfaces like black silicon (b-Si) due to the geometry's steep slopes, which mimic local variations in emission angles. In this study, this effect is explicitly quantified through an integral geometric analysis using Minkowski tensors, correlating XPS chemical data with topographical information from Atomic Force Microscopy (AFM). This approach yields reliable estimates of layer thicknesses for nanorough surfaces. For b-Si, it is found that the oxide layer is ≈50%-80% thicker than the native oxide layer on a standard Si wafer. This study underscores the significant impact of nanoscale geometries on chemical property analysis.

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Publication Details

Journal
Small Methods
Published
2025-03-23
DOI
https://doi.org/10.1002/smtd.202401929
Citations
4
Primary Topic
Electron and X-Ray Spectroscopy Techniques
Type
article
Field-Weighted Citation Impact
2.64

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article

Impact of Geometry on Chemical Analysis Exemplified for Photoelectron Spectroscopy of Black Silicon

Karin Jacobs, Frank Müller, Samuel Grandthyll, Michael A. Klatt et al.
4 citations
Small Methods
Electron and X-Ray Spectroscopy Techniques
2.64
article

Impact of Geometry on Chemical Analysis Exemplified for Photoelectron Spectroscopy of Black Silicon

Karin Jacobs, Frank Müller, Samuel Grandthyll, Michael A. Klatt, Hendrik Hähl, Thomas Faidt, Friederike Nolle, Anton Wittig, Jens U. Neurohr
article en
4 citations

Abstract

For smooth surfaces, chemical composition can be readily analyzed using various spectroscopic techniques, a prominent example is X-ray photoelectron spectroscopy (XPS), where the relative proportions of the elements are mainly determined by the intensity ratio of the element-specific photoelectrons. However, this analysis becomes more complex for nanorough surfaces like black silicon (b-Si) due to the geometry's steep slopes, which mimic local variations in emission angles. In this study, this effect is explicitly quantified through an integral geometric analysis using Minkowski tensors, correlating XPS chemical data with topographical information from Atomic Force Microscopy (AFM). This approach yields reliable estimates of layer thicknesses for nanorough surfaces. For b-Si, it is found that the oxide layer is ≈50%-80% thicker than the native oxide layer on a standard Si wafer. This study underscores the significant impact of nanoscale geometries on chemical property analysis.

Small MethodsVol. 9(7)
Trier University of Applied Sciences (DE), Deutsches Zentrum für Luft- und Raumfahrt e. V. (DLR) (DE), Ludwig-Maximilians-Universität München (DE), Saarland University (DE)
Deutsche Forschungsgemeinschaft, Helmholtz Association
Sustainable cities and communities
Openalex Percentile: Top 11%
Electron and X-Ray Spectroscopy Techniques
2.64
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