Magnetic and Temperature Effects on Optical Quantum Transition Line Properties in Electron-Piezoelectric Phonon Coupled Materials Under Square Well Confinement Potential

Despite extensive research on semiconductor materials, the influence of temperature and magnetic field on the optical quantum transitions within semiconductors remains insufficiently understood. We therefore investigated the Optical Quantum Transition Line Properties (OQTLP), including line shapes (LS) and line widths (LW), as functions of temperature and magnetic field in electron–piezoelectric-phonon-interacting systems within semiconductor materials. A theoretical framework incorporating projection-based equations and equilibrium average projection was applied to GaAs and CdS. Similarly, LW generally increases with magnetic field in a square-well confinement potential across most temperature regions. However, in high magnetic fields at low temperatures, LW decreases for GaAs. Additionally, LW increases with rising temperature. We also compare the LW and LS for transitions within intra- and inter-Landau levels to analyze the quantum transition process. The results indicate that intra-Landau level transitions primarily dominate the temperature dependence of quantum transitions in GaAs and CdS.