Application of GaN E-HEMT to Reaction Wheel Motor Drive

This work proposes a simulation-aided design method for high switching frequency of GaN E-HEMT inverters. In order to test the effect of lower on-resistance of GaN E-HEMT, the half-bridge circuit was developed, and applied to the reaction wheel motor drive. By the test result, the GaN E-HEMT drive circuit without the reverse diode consumes less energy than that of Si- and SiC-based MOSFET for a prescribed speed range at room condition.