Influence of Harmonics on the Reliability of Press Pack IGBT Devices

Press pack insulated gate bipolar transistors (PP-IGBTs) are widely used in flexible DC transmission due to their special advantages. However, the nonlinear characteristics of switching devices lead to the generation of harmonics. This paper analyzes the impact of harmonics on device reliability through the coupling effect of multiple physical fields with finite element method (FEM). Results show that with the effect of harmonic, the average junction temperature rise of the device increases by about 5%, and the maximum internal junction temperature difference increases by about 7%.