Double Pulse Test Bench Design Methodology for Power Electronics Applications

This work details the methodology for the design and implementation of the Double Pulse Test (DPT) method, extensively employed for extracting the dynamic characteristics of Silicon Carbide (SiC) MOSFETs. We focus on the design techniques for the printed circuit board (PCB) and the dimensioning of key components, alongside precise measurement techniques. Experimental results from our custom-designed DPT test bench are presented, demonstrating the accuracy and reliability of the test setup. This study provides practical insights into optimizing DPT setups for SiC MOSFETs, contributing to enhanced performance in power electronic applications.