Performance Analysis of a Novel PbS Quantum Dot Solar Cell with FaSnI₃ Perovskite Interfacial Layer

A numerical simulation of a novel quantum dot solar cell design with a three-dimensional perovskite interfacial layer is presented in this paper. ITO/TiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>/FASnI<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>/PbS-TBAI/PbS-EDT make up the device architecture, with PbS-TBAI quantum dots serving as the main absorber. We examined the device's performance using J-V characteristics, energy band diagram, external quantum efficiency (EQE), and electric field analysis using the SCAPS-1D modeling program. According to simulation findings, the system has an open-circuit voltage of 0.67 V, a short-circuit current density of 32.08 mA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, a fill factor of 56.38%, and a power conversion efficiency of 12.24%. Peak quantum efficiency in the EQE spectrum is more than 90%, and the response is wide over the visible and near-infrared areas. Understanding the charge transport processes inside the device is possible through examination of the energy band diagram and electric field distribution. This work contributes to the understanding of hybrid quantum dot-perovskite structures and their potential for high-efficiency solar cells.