The influence of Doping Density in Active Base Layer Thickness on Tandem GaInP /GaAs photovoltaic Performance

This study examines the role of doping density and active base layer thickness in enhancing the performance of tandem GaInP/GaAs solar cells. Using numerical simulations, we analyzed how these parameters impact the efficiency of both subcells. The findings indicate that fine-tuning doping concentrations significantly improves the efficiency of the GaInP and GaAs subcells by 1.96 % and 4.43 %, respectively. Moreover, the simulations identified optimal doping ranges for the base layers, revealing the crucial influence of doping control on overall device performance. Adjusting the base layer thickness also contributed to better current matching between the sub-cells, further optimizing the tandem cell efficiency. These results underscore the importance of careful manipulation of doping density and base layer thickness in designing high-performance GaInP/GaAs tandem solar cells, offering a pathway toward more efficient photovoltaic technologies.