Dual-Mode Broadband GaN HEMT Power Amplifier for Continuous Wave and Pulse Applications

To address the integration requirements of next-generation electronic equipment, this study presents a dual-mode power amplifier capable of switching between continuous wave/pulse mode by adjusting the operating voltage. The output impedance of the power amplifier varies under different bias voltages. This paper proposes a gallium nitride high electron mobility transistor (GaN HEMT) dual-mode power amplifier, which achieves broadband, high-power matching at both voltages by examining the output impedance characteristics of the power transistor core across varying voltages and optimizing within the impedance domain. Simulation results demonstrate that the proposed power amplifier delivers an output power exceeding 53 dBm in 48 V pulse mode with a typical drain efficiency of $\mathbf{4 2 \%}$, and achieves over 50 dBm in 28 V CW mode with a typical drain efficiency of 40%