Modulation of Threshold Voltage and Factors That Influence it in NMOS Transistors

This study explores techniques for modulating the threshold voltage of metal oxide semiconductor field-effect devices. The threshold voltage is a critical characteristic of these transistors. Our analysis examines the factors influencing this parameter and proposes efficient strategies for its adjustment. To validate these approaches, we designed and simulated an n-channel device using computer-aided tools, with tests conducted at a temperature of 0 °C. The findings demonstrate the efficacy of the proposed methods in fine-tuning transistor behavior.