Modeling and Optimization of Enhanced High-Efficiency InGaP/GaAs Tandem Solar Cells Without Anti-Reflective Coating

Modern multi-junction solar cell technology offers a pathway to achieving consistent and high photovoltaic conversion efficiencies through enhanced solar spectrum absorption. Indeed, during the last years, the industries of solar cells have focused on optimizing device structures, utilizing both robust and delicate materials to maximize their performances. This paper presents the modeling and optimization of the electrical and structural properties of high-efficiency InGaP/GaAs double-junction solar cells, specifically without employing an anti-reflective coating. This developed structure has been achieved by introducing a buffer layer in the lower layer and incorporating an upper back surface field layer into the investigated cell structure. Furthermore, the optimization conducted in this paper using Silvaco-Atlas software (version 2018) under the AM1.5G spectrum reveals that the proposed InGaP/GaAs tandem cell configuration exhibits significant performance, reaching conversion efficiency of 41.585%. It can be said that this adapted structure yields a short-circuit current density of 21.65 mA/cm2, an open-circuit voltage of 2.319 V, and a filling factor of 84.001%. Whereas this newly optimized structure demonstrates its effectiveness in enhancing solar cell efficiency performance, presenting highly promising results with potential significance for the devices’ optical and electrical properties.