Polarity modulation in compositionally tunable Bi2O2Se thin films

Two-dimensional (2D) materials have emerged as one of most promising candidates to meet the demands of beyond-silicon technology. Among 2D semiconductors, Bi<sub>2</sub>O<sub>2</sub>Se (BOSe) stands out as a channel material for advanced electronic applications, due to its high electron mobility and the formation of a native high-k dielectric layer. However, the fabrication of p-type 2D BOSe transistors remains challenging. Here, we report an area-selective doping method at low temperatures (~600 K, compatible with back-end-of-line processes) of pulsed laser deposited BOSe thin films, enabling the modulation of their carrier polarity via the introduction of Zn<sup>2+</sup> substitutional dopants. Taking advantage of this doping strategy, we demonstrate the fabrication of a 2D vertical p-n homojunction with an on/off ratio in photoresponse of ~10<sup>6</sup> and planar transistors based on p-doped BOSe homojunctions. Our results help promoting the application of this material system towards the development of the next-generation electronics.

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Publication Details

Journal
Nature Communications
Published
2025-03-24
DOI
https://doi.org/10.1038/s41467-025-58198-3
Citations
9
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
4.66
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article

Polarity modulation in compositionally tunable Bi2O2Se thin films

Rong Huang, Chun‐Liang Lin, Yu‐Lun Chueh, Chao‐Hui Yeh et al.
9 citations
Nature Communications
2D Materials and Applications
4.66
article

Polarity modulation in compositionally tunable Bi2O2Se thin films

Rong Huang, Chun‐Liang Lin, Yu‐Lun Chueh, Chao‐Hui Yeh, Ying‐Hao Chu, Yong-Jyun Wang, Po‐Wen Chiu, Jianwei Zhang, Luning Hao, Cheng‐Yao Lo, Zhenzhong Yang, I-Sung Chen, Jianchu Chen, Haonan Wang, Yi-Cheng Chen, Saijun Wu, Yuanchih Chang, J. I. Hong, Cheng-Yang Syu
article en
9 citations

Abstract

Two-dimensional (2D) materials have emerged as one of most promising candidates to meet the demands of beyond-silicon technology. Among 2D semiconductors, Bi<sub>2</sub>O<sub>2</sub>Se (BOSe) stands out as a channel material for advanced electronic applications, due to its high electron mobility and the formation of a native high-k dielectric layer. However, the fabrication of p-type 2D BOSe transistors remains challenging. Here, we report an area-selective doping method at low temperatures (~600 K, compatible with back-end-of-line processes) of pulsed laser deposited BOSe thin films, enabling the modulation of their carrier polarity via the introduction of Zn<sup>2+</sup> substitutional dopants. Taking advantage of this doping strategy, we demonstrate the fabrication of a 2D vertical p-n homojunction with an on/off ratio in photoresponse of ~10<sup>6</sup> and planar transistors based on p-doped BOSe homojunctions. Our results help promoting the application of this material system towards the development of the next-generation electronics.

Nature CommunicationsVol. 16(1)
National Yang Ming Chiao Tung University (TW), National Tsing Hua University (TW), East China Normal University (CN)
Openalex Percentile: Top 5%
2D Materials and Applications
4.66
DOIOpen Access PDFOpenAlex
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