Deep UV Detection： from Single-crystalline MgZnO to Amorphous Ga<sub>2</sub>O<sub>3</sub>

Abstract Wide bandgap semiconductors have great potential for the development of compact solar-blind ultraviolet detectors without filters.This article summarizes the research progress of deep ultraviolet photodetectors using wide bandgap oxide semiconductors including MgZnO and amorphous Ga 2 O 3 (a-Ga 2 O 3 ) thin films.It has been found that the photoresponse performance of a-Ga 2 O 3 thin film is comparable or even better than that of crystalline thin films.Numerous results demonstrate that oxygen vacancy (V O ) defects play a crucial role in device performance.Based on the effective modulation of V O defects high performance solar-blind ultraviolet photodetectors can be successfully achieved.In addition the persistent photoconductivity effect which is usually accompanied by the presence of V O defects in oxide materials provides a new perspective for the development of optoelectronic synaptic devices in deep ultraviolet range.Finally a brief discussion is provided concerning the above research progress as well as some unsolved issues.These advancements are expected to promote the industrial application of wide bandgap oxide semiconductor materials especially a-Ga 2 O 3 in deep ultraviolet detection in the future.