Impact of Oxygen Vacancy on Performance of Amorphous InGaZnO Based Schottky Barrier Diode
On January 03, 2025, a team of experts led by JIA Bin, HUANG Xiaodong from the School of Integrated Circuits and WANG Lifeng from the School of Electronic Science & Engineering published an article in the 发光学报, introducing its research progress in the field of rectifying circuit. By adjusting the oxygen vacancy concentration in InGaZnO films, the team optimized the performance of rectifying diodes, laying a foundation for energy conversion and management.
Authors
- Lifeng Wang (ORCID: https://orcid.org/0000-0002-6435-5391)
- Zhengli Han (ORCID: https://orcid.org/0000-0002-8648-854X)
- Ming Qin (ORCID: https://orcid.org/0000-0002-8424-6299)
- Xiaowen Tong (ORCID: https://orcid.org/0000-0003-4872-1678)
- Xiaodong Huang (ORCID: https://orcid.org/0000-0002-5229-6881)
- Bin Jia (ORCID: https://orcid.org/0000-0002-6335-9024)
Publication Details
- Journal
- Chinese Journal of Luminescence
- Published
- 2025-01-01
- DOI
- https://doi.org/10.37188/cjl.20240265
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Southeast University