Comparative study of molecular beam epitaxy-deposited ZnS:O and CdS:O as electron-transporting materials in Sb<sub>2</sub>(S,Se)<sub>3</sub> solar cells
ZnS:O is a promising CdS alternative for electron transport. Molecular beam epitaxy-deposited ZnS:O films enable5.15% efficiency in Sb 2 (S,Se) 3 solar cells. This study reveals key factors limiting the ZnS:O/Sb 2 (S,Se) 3 device performance.
Authors
- Jiufeng Dong
- Xiuxun Han (ORCID: https://orcid.org/0000-0002-1696-0925)
- Rongfeng Tang (ORCID: https://orcid.org/0000-0002-2211-5859)
- Yi Zhang (ORCID: https://orcid.org/0000-0003-2291-6290)
- Ke Li (ORCID: https://orcid.org/0009-0009-5549-3109)
- Tao Chen (ORCID: https://orcid.org/0000-0001-9704-9545)
- Yan Zhang (ORCID: https://orcid.org/0000-0001-9235-6861)
- Dan Liu (ORCID: https://orcid.org/0000-0001-7023-6471)
- Yawu He
- Haolin Wang (ORCID: https://orcid.org/0009-0002-5294-3134)
Institutions
- Nankai University (CN)
- Hefei National Center for Physical Sciences at Nanoscale (CN)
- Hunan Rare Earth Metal Material Research Institute (CN)
- University of Chinese Academy of Sciences (CN)
- Jiangxi University of Science and Technology (CN)
Publication Details
- Journal
- Journal of Materials Chemistry A
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5ta00642b
- Citations
- 1
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.73