Sub-5.1nm Schottky field-effect transistor based on <i>γ</i>-GeSe

Abstract As silicon-based field-effect transistors (FETs) are scaled down to the nanometer regime, short-channel effects and doping challenges become increasingly pronounced, hindering their ability to meet the performance standards set by the International Roadmap for Devices and Systems (IRDS). Two-dimensional (2D) semiconductors are of interest for the development of higher performance FET due to their useful properties and all-in-one potentials and 2D materials-based FETs have attracted a large amount of attention. In this work, we propose a new Schottky Barrier FET (SBFET) with a 7.5 nm channel length based on the recently synthetized 2D materials γ -GeSe and studied the electronic properties and device performance by the first-principles quantum transport simulations. It is found that this FET demonstrates a subthreshold swing ( SS ) of 79 mV dec −1 , an on/off current ratio of 3.13 × 10 4 , and an on-current of 1878 μ A μ m −1 . These metrics not only align with but also surpass IRDS standards, highlighting the γ -GeSe SBFET’s ability to mitigate short-channel effects while providing energy-efficient, high-current-drive performance. Its high on-state current, low SS , and substantial on/off ratio establish it as a promising candidate for nanoelectronics, particularly in applications requiring power-sensitive, high-performance 2D transistors.