Photoionization cross section and binding energies in a GaAs quantum dots: effects of hydrostatic pressure, temperature and electric potentials

Abstract In this paper, we have theoretically investigated effects of certain electric confining potentials, hydrostatic pressure, and temperature on binding energies, photoionization cross-sections (PCS) and associated diamagnetic susceptibilities (DMS) in a GaAs spherical quantum dot. The potential profile considered here is the linear combination of the inverse lateral shifted parabolic potential and the inverse parabolic potential. Results show that the inverse lateral shifted parabolic potential enhances both binding energies and transition energies, while the inverse parabolic potential decreases the binding energies and transition energies. Photoionization occurs whenever the energy of incident electromagnetic radiation equals the transition energies. This implies that the two potentials can be used to tune PCS in SQDs, the inverse lateral shifted parabolic potential blueshifting the peaks of the PCS, while the inverse parabolic potential redshifting the peaks. The results also reveal that rise in temperature increases transition energies while it decreases binding energies. On the other hand, increase in pressure decreases transition energies while it enhances binding energies. This implies that, in the event that SQDs are incorporated in nanodevices, increase in temperature (possibly due to Joule heating) may detune SQDs. Thus, pressure of precise magnitude can be applied to counter the effects of temperature on transition energies, thereby ameliorating the temperature-induced detuning.