Giant Goos-Hänchen shift induced by coupling of localized electromagnetic modes to magnetoexcitons of a semiconductor quantum well

We have analyzed the optical spectra and the Goos-H"anchen shift (GHS) for a semiconductor slab having an embedded quantum well and being subjected to a sufficiently strong external dc magnetic field near magnetoexciton resonances. We consider two setup configurations, which satisfy the conditions for observing the breaking of total internal reflection. Specifically, in the first setup we have considered only two prisms covering the semiconductor slab, whereas in the second one there are two low-refractive-index dielectric layers separating two prisms from the semiconductor slab. The reflectivity and transmissivity spectra, as well as their corresponding GHS, were obtained to show that the electromagnetic eigenmodes localized on the semiconductor slab are coupled to the confined magnetoexcitons. The coupling strength is significantly different for two considered setups. Remarkably, in the second configuration, as a result of the strong coupling between magnetoexcitons and localized modes, an enhancement of the GHS, as huge as 100 times the wavelength, is predicted.