Efficient Scalable MoO₃ Decorated PSi Based Optical Memristor Devices

This letter presents the development of wafer scalable optical memristor devices using molybdenum trioxide (MoO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub>) decorated porous silicon (PSi). The devices were tested with electrical and optical stimuli at room temperature. The test results have shown that the MoO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> decorated PSi based memristor offers improved performance metrics like high responsivity (826mA/W), high detectivity (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.08\times 10^{\mathbf {11}}$ </tex-math></inline-formula>Jones), fast response speed (84.1/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$80.1\mu $ </tex-math></inline-formula>s), high paired pulse facilitation (PPF) index (461 %) and high endurance (100 cycles). The value of the responsivity is <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim 3\times 10^{\mathbf {2}}$ </tex-math></inline-formula> times and ~4.5 times higher than PSi and MoO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> based devices respectively. The MoO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> decorated PSi device is highly repeatable, reliable and reproducible for ultrafast varying signals. These developed devices can be used for broadband light sensing as well as resistive switching applications.