E-Mode Vertical <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> (010) U-Trench MOSFETs With In-Situ Mg-Doped Current Blocking Layers

This work presents the fabrication and performance analysis of a novel enhancement-mode (E-mode) vertical <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga2O3 (010) U-trench MOSFET featuring an in-situ Mg-doped current blocking layer (CBL) for high-power applications. Utilizing metal-organic chemical vapor deposition (MOCVD), we achieved precise Mg doping of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.3\times 10^{{19}}$ </tex-math></inline-formula> cm<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${}^{{a}-{3}}$ </tex-math></inline-formula> within the CBL to enhance current blocking capability while maintaining a robust threshold voltage of 5 V and a low on-state resistance of 5 m<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Omega $ </tex-math></inline-formula>.cm2. The device achieved an on-current of 1.56 kA/cm2 at V<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${}_{\textit {GS}} =20$ </tex-math></inline-formula> V and V<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${}_{\textit {DS}} =40$ </tex-math></inline-formula> V. The fabricated devices demonstrate a peak breakdown voltage of 101 V with an average breakdown field strength of up to 1.68 MV.cm<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${}^{-{1}}$ </tex-math></inline-formula>. The calculated power device Figure of Merit is 2 MW.cm<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${}^{-{2}}$ </tex-math></inline-formula>.

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Publication Details

Journal
IEEE Electron Device Letters
Published
2025-03-24
DOI
https://doi.org/10.1109/led.2025.3554401
Citations
11
Primary Topic
Ga2O3 and related materials
Type
article
Field-Weighted Citation Impact
4.70

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article

E-Mode Vertical β-Ga2O3 (010) U-Trench MOSFETs With In-Situ Mg-Doped Current Blocking Layers

Hongping Zhao, Sudipto Saha, Dong-Su Yu, Walid Amir et al.
11 citations
IEEE Electron Device Letters
Ga2O3 and related materials
4.70
article

E-Mode Vertical β-Ga2O3 (010) U-Trench MOSFETs With In-Situ Mg-Doped Current Blocking Layers

Hongping Zhao, Sudipto Saha, Dong-Su Yu, Walid Amir, Uttam Singisetti, Lingyu Meng, Jiawei Liu
article en
11 citations

Abstract

This work presents the fabrication and performance analysis of a novel enhancement-mode (E-mode) vertical <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga2O3 (010) U-trench MOSFET featuring an in-situ Mg-doped current blocking layer (CBL) for high-power applications. Utilizing metal-organic chemical vapor deposition (MOCVD), we achieved precise Mg doping of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.3\times 10^{{19}}$ </tex-math></inline-formula> cm<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${}^{{a}-{3}}$ </tex-math></inline-formula> within the CBL to enhance current blocking capability while maintaining a robust threshold voltage of 5 V and a low on-state resistance of 5 m<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Omega $ </tex-math></inline-formula>.cm2. The device achieved an on-current of 1.56 kA/cm2 at V<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${}_{\textit {GS}} =20$ </tex-math></inline-formula> V and V<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${}_{\textit {DS}} =40$ </tex-math></inline-formula> V. The fabricated devices demonstrate a peak breakdown voltage of 101 V with an average breakdown field strength of up to 1.68 MV.cm<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${}^{-{1}}$ </tex-math></inline-formula>. The calculated power device Figure of Merit is 2 MW.cm<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${}^{-{2}}$ </tex-math></inline-formula>.

IEEE Electron Device LettersVol. 46(5)
The Ohio State University (US), University at Buffalo, State University of New York (US)
National Science Foundation, Advanced Research Projects Agency, Air Force Office of Scientific Research
Openalex Percentile: Top 5%
Ga2O3 and related materials
4.70
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