Loss Analysis of Hybrid Switch with Minimum SiC MOSFET Conduction Modulation

The alternative SiC/Si hybrid switch with minimum SiC MOSFET conduction (HyS-MC) improve the efficiency by utilizing the sufficient switching behavior of SiC MOSFET to create zero-voltage conditions for Si IGBT. While simultaneously the required current capacity for SiC MOSFET can be reduced. The fundamental operation principle and the loss characteristics model are introduced in this paper, considering the nonlinear forward characteristic of Si IGBT. The effect of time patterns on the losses is investigated through the mathematical model and experimental test. The experimental results of the multi-pulse test circuit are presented to verify the loss estimates.