A novel model for bulk modulus and bond energy calculation of Si and its binary compounds, tetrahedral ternary semiconductors in bulk and nanocrystals

This study investigates the correlations between bulk modulus, mean bond length, mean bond ionicity, and bond energy for a variety of tetrahedral group semiconductors, such as IV, III-V, II-VI, I-III-VI<sub>2</sub>, II-IV-V<sub>2</sub>, I<sub>2</sub>-IV-VI<sub>3</sub>, I<sub>3</sub>-V-VI<sub>4</sub>, and III<sub>2</sub>-VI<sub>3</sub> elements and compounds. A clear correlation between the mean bond length (<i>d</i><sub>mean</sub>), and bond energy (<i>E</i><sub>b</sub>) was found in the form: <i>E</i><sub>b</sub> = 74.115 (eV A<sup>2</sup>) × <i>d</i><sub>mean</sub><sup>-2</sup> × (1 + <i>f</i><sub>i</sub>), where <i>f</i><sub>i</sub> is the group compound ionicity. For every group, ionicity values between 0 and 0.75 were calculated. Additionally, a consistent link between bulk modulus (<i>B</i>) and bond energy was found and used to compute bulk modulus (in GPa) and bond energy (in eV) for a variety of groups, including II-IV-V<sub>2</sub>, I-III-VI<sub>2</sub>, III<sub>2</sub>-VI<sub>3</sub>, I<sub>2</sub>-IV-VI<sub>3</sub>, and I<sub>3</sub>-V-VI<sub>4</sub>, which were previously unavailable. Additionally, by adding size-dependent factors through mean bond length <i>d</i><sub>mean</sub> at the nanoscale, extended the obtained relationships to a nanoscale semiconductor. When applied to Si nanocrystals, the modified bulk modulus equation, <i>B</i>(<i>r</i>) = 0.7775 (GPa eV<sup>-1.85</sup>) × (<i>E</i><sub>b</sub>(<i>r</i>))<sup>1.85</sup> × (1 - <i>f</i><sub>i</sub>) takes size effects into account without allowing for parameter adjustment. Because of variations in the surface-to-volume ratio, lattice characteristics, bond ionicity, and mean bond length, the bulk modulus drops from 98 GPa in bulk Si to 90 GPa in 5 nm Si nanoparticles (NPs). The bulk modulus of semiconductor materials noticeably decreases with decreasing size; NPs exhibit the largest fall, followed by nanowires (NWs) and nanofilms (NFs). These discrepancies result from changes in the nanoscale's mean bond length and bond energy. The findings emphasize the significance of these effects for adjusting the mechanical characteristics of nanostructured materials, and simulations and experimental evidence corroborate them.

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Publication Details

Journal
Physical Chemistry Chemical Physics
Published
2025-01-01
DOI
https://doi.org/10.1039/d5cp00202h
Citations
2
Primary Topic
Surface and Thin Film Phenomena
Type
article
Field-Weighted Citation Impact
2.49
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article

A novel model for bulk modulus and bond energy calculation of Si and its binary compounds, tetrahedral ternary semiconductors in bulk and nanocrystals

B Abdullah, Nzar Luqman Muttalib
2 citations
Physical Chemistry Chemical Physics
Surface and Thin Film Phenomena
2.49
article

A novel model for bulk modulus and bond energy calculation of Si and its binary compounds, tetrahedral ternary semiconductors in bulk and nanocrystals

B Abdullah, Nzar Luqman Muttalib
article en
2 citations

Abstract

This study investigates the correlations between bulk modulus, mean bond length, mean bond ionicity, and bond energy for a variety of tetrahedral group semiconductors, such as IV, III-V, II-VI, I-III-VI<sub>2</sub>, II-IV-V<sub>2</sub>, I<sub>2</sub>-IV-VI<sub>3</sub>, I<sub>3</sub>-V-VI<sub>4</sub>, and III<sub>2</sub>-VI<sub>3</sub> elements and compounds. A clear correlation between the mean bond length (<i>d</i><sub>mean</sub>), and bond energy (<i>E</i><sub>b</sub>) was found in the form: <i>E</i><sub>b</sub> = 74.115 (eV A<sup>2</sup>) × <i>d</i><sub>mean</sub><sup>-2</sup> × (1 + <i>f</i><sub>i</sub>), where <i>f</i><sub>i</sub> is the group compound ionicity. For every group, ionicity values between 0 and 0.75 were calculated. Additionally, a consistent link between bulk modulus (<i>B</i>) and bond energy was found and used to compute bulk modulus (in GPa) and bond energy (in eV) for a variety of groups, including II-IV-V<sub>2</sub>, I-III-VI<sub>2</sub>, III<sub>2</sub>-VI<sub>3</sub>, I<sub>2</sub>-IV-VI<sub>3</sub>, and I<sub>3</sub>-V-VI<sub>4</sub>, which were previously unavailable. Additionally, by adding size-dependent factors through mean bond length <i>d</i><sub>mean</sub> at the nanoscale, extended the obtained relationships to a nanoscale semiconductor. When applied to Si nanocrystals, the modified bulk modulus equation, <i>B</i>(<i>r</i>) = 0.7775 (GPa eV<sup>-1.85</sup>) × (<i>E</i><sub>b</sub>(<i>r</i>))<sup>1.85</sup> × (1 - <i>f</i><sub>i</sub>) takes size effects into account without allowing for parameter adjustment. Because of variations in the surface-to-volume ratio, lattice characteristics, bond ionicity, and mean bond length, the bulk modulus drops from 98 GPa in bulk Si to 90 GPa in 5 nm Si nanoparticles (NPs). The bulk modulus of semiconductor materials noticeably decreases with decreasing size; NPs exhibit the largest fall, followed by nanowires (NWs) and nanofilms (NFs). These discrepancies result from changes in the nanoscale's mean bond length and bond energy. The findings emphasize the significance of these effects for adjusting the mechanical characteristics of nanostructured materials, and simulations and experimental evidence corroborate them.

Physical Chemistry Chemical PhysicsVol. 27(15)
Salahaddin University-Erbil (IQ)
Affordable and clean energy
Openalex Percentile: Top 13%
Surface and Thin Film Phenomena
2.49
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