Effect of Resistive State Switching in Led Structures Based on InGaN/GaN

The change in the electrical characteristics of LED structures based on InGaN/GaN caused by high current flow in the pulsed mode is investigated. Stable switching between high-conductive (resistive) and low-conductive (light-emitting) states is discovered, which is accompanied by a change in current transfer mechanisms. The main switching mechanism is considered to be the movement of mobile defects and the formation of conductive filaments (channels) in the space-charge region.