Epitaxial PbZrO <sub>3</sub> films from chemical solutions
Single-crystal PbZrO 3 thin films are processed via chemical route. The 680 nm-thick films are antiferroelectric, while the 170 nm-thick films show ferroelectric-like switching, which is associated with the defect formation during the annealing.
Authors
- Maja Koblar (ORCID: https://orcid.org/0009-0006-9706-0094)
- Goran Dražić (ORCID: https://orcid.org/0000-0001-7809-8050)
- Andreja Benčan
- Emmanuel Defaÿ (ORCID: https://orcid.org/0000-0003-1462-8969)
- Torsten Granzow (ORCID: https://orcid.org/0000-0002-3777-4689)
- Sebastjan Glinšek (ORCID: https://orcid.org/0000-0002-5614-0825)
- Maël Guennou (ORCID: https://orcid.org/0000-0001-9349-3024)
- Alfredo Blazquez Martinez
- Y.H. Fleming (ORCID: https://orcid.org/0000-0003-4752-9844)
- Andreas Ost
- Alexander Ost
Institutions
- University of Luxembourg (LU)
- Jožef Stefan Institute (SI)
- Luxembourg Institute of Science and Technology (LU)
- National Institute of Chemistry (SI)
Publication Details
- Journal
- Materials Advances
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d4ma01155d
- Primary Topic
- Ferroelectric and Piezoelectric Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Deutsche Forschungsgemeinschaft
- Fonds National de la Recherche Luxembourg