Multi-channel RF-optical receiver enabled by a high performance p-i-n InP-InGaAs-based photodetector array

We propose an integrated back-illuminated InP/InGaAs p-i-n photodetector array (PDA) with high responsivity (R) and external quantum efficiency (EQE). The PDA was characterized and packaged for small-signal response and transmission experiments. At a bias voltage of -5 V, the dark current is below 17.5 <i>μ</i>A/cm<sup>2</sup>, and the average optical responsivity reaches up to 1 A/W for each <i>∅</i>=50<i>μ</i>m element at 1550 nm. The external quantum efficiency is as high as 81<i>%</i> at -5 V at 1550 nm. Under a photocurrent of 63 <i>μ</i>A at -5 V bias, the proposed InP/InGaAs PDA exhibits an average 3 dB bandwidth of 3.6 GHz. We finally demonstrate a BER below 10<sup>-12</sup> at a 2.25 Gbit/s data rate. The compact size and large photosensitive area of the PDA will enable new applications for radio on free-space optical (RoFSO) communications.

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Publication Details

Journal
Optics Letters
Published
2025-03-24
DOI
https://doi.org/10.1364/ol.554255
Citations
2
Primary Topic
Photonic and Optical Devices
Type
article
Field-Weighted Citation Impact
1.46
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article

Multi-channel RF-optical receiver enabled by a high performance p-i-n InP-InGaAs-based photodetector array

YUNJIE YAN, Geert Morthier, Yiying Gu, Hasan Salmanian et al.
2 citations
Optics Letters
Photonic and Optical Devices
1.46
article

Multi-channel RF-optical receiver enabled by a high performance p-i-n InP-InGaAs-based photodetector array

YUNJIE YAN, Geert Morthier, Yiying Gu, Hasan Salmanian, Mingshan Zhao, Zhenlin Wu, Mingxiang Yang, Chang‐Heon Kang, Shaoshuai Han
article en
2 citations

Abstract

We propose an integrated back-illuminated InP/InGaAs p-i-n photodetector array (PDA) with high responsivity (R) and external quantum efficiency (EQE). The PDA was characterized and packaged for small-signal response and transmission experiments. At a bias voltage of -5 V, the dark current is below 17.5 <i>μ</i>A/cm<sup>2</sup>, and the average optical responsivity reaches up to 1 A/W for each <i>∅</i>=50<i>μ</i>m element at 1550 nm. The external quantum efficiency is as high as 81<i>%</i> at -5 V at 1550 nm. Under a photocurrent of 63 <i>μ</i>A at -5 V bias, the proposed InP/InGaAs PDA exhibits an average 3 dB bandwidth of 3.6 GHz. We finally demonstrate a BER below 10<sup>-12</sup> at a 2.25 Gbit/s data rate. The compact size and large photosensitive area of the PDA will enable new applications for radio on free-space optical (RoFSO) communications.

Optics LettersVol. 50(8)
Ghent University Hospital (BE)
Affordable and clean energy
Openalex Percentile: Top 19%
Photonic and Optical Devices
1.46
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