Color centers and crystal structural transformations induced by femtosecond laser writing in 4H-SiC

Silicon carbide (SiC), a wide-bandgap semiconductor, is gaining importance in quantum technologies due to its promising color centers. Among SiC polytypes, 4H-SiC stands out with its wide bandgap and low impurities, making it ideal for color center research. Femtosecond laser direct writing enables precise creation of color centers, offering nanoscale accuracy. This study explores the optical properties and structural changes in 4H-SiC induced by laser writing. Techniques such as Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and transmission electron microscopy are used to analyze lattice damage and transformations, providing insights into precise color center fabrication and its implications for quantum applications.

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Publication Details

Journal
Journal of Applied Physics
Published
2025-03-24
DOI
https://doi.org/10.1063/5.0256732
Citations
4
Primary Topic
Diamond and Carbon-based Materials Research
Type
article
Field-Weighted Citation Impact
2.07

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article

Color centers and crystal structural transformations induced by femtosecond laser writing in 4H-SiC

Qunsi Yang, Weizong Xu, Hai Lu, Yiwang Wang et al.
4 citations
Journal of Applied Physics
Diamond and Carbon-based Materials Research
2.07
article

Color centers and crystal structural transformations induced by femtosecond laser writing in 4H-SiC

Qunsi Yang, Weizong Xu, Hai Lu, Yiwang Wang, Fei Xu, Dong Zhou, Xiufang Chen, Hai‐Zhi Song, Feng Zhou, Junxian Luo, Tao Tao, Rong Zhang, Fangfang Ren, Xinghua Liu, Jiandong Ye, Jie Fu, Qiang Xu, Bin Liu, Xiangang Xu
article en
4 citations

Abstract

Silicon carbide (SiC), a wide-bandgap semiconductor, is gaining importance in quantum technologies due to its promising color centers. Among SiC polytypes, 4H-SiC stands out with its wide bandgap and low impurities, making it ideal for color center research. Femtosecond laser direct writing enables precise creation of color centers, offering nanoscale accuracy. This study explores the optical properties and structural changes in 4H-SiC induced by laser writing. Techniques such as Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and transmission electron microscopy are used to analyze lattice damage and transformations, providing insights into precise color center fabrication and its implications for quantum applications.

Journal of Applied PhysicsVol. 137(12)
Shandong University (CN), Hefei University (CN), Collaborative Innovation Center of Advanced Microstructures (CN), Nanjing University (CN)
National Natural Science Foundation of China
Quality Education
Openalex Percentile: Top 14%
Diamond and Carbon-based Materials Research
2.07
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