Exploring Electronic States and Ultrafast Electron Dynamics in AlInP Window Layers: The Role of Surface Reconstruction

Abstract AlInP (001) is widely utilized as a window layer in optoelectronic devices, including world‐record III‐V multi‐junction solar cells and photoelectrochemical (PEC) cells. The chemical and electronic properties of AlInP (001) depend on its surface reconstruction, which impacts its interaction with electrolytes in PEC applications and passivation layers. This study investigates AlInP (001) surface reconstructions using density functional theory and experimental methods. Phosphorus‐rich (P‐rich) and indium‐rich (In‐rich) AlInP surfaces are prepared with in situ monitoring of the process by reflection anisotropy (RA) spectroscopy and confirmed by low‐energy electron diffraction and photoemission spectroscopy. The experimental RA spectra closely match the theoretical predictions obtained by solving the Bethe–Salpeter equation. It is shown that missing hydrogen on P‐rich surfaces and formation of In–In 1D atomic chains on In‐rich surfaces introduce mid‐gap surface states that pin the Fermi level and induce band bending. Time‐resolved two‐photon photoemission measurements reveal ultrafast near‐surface electron dynamics for both P‐rich and In‐rich surfaces, demonstrating photoexcited electrons reaching the surface conduction band minimum and relaxing to mid‐gap surface states on about hundreds of fs. This work provides the most extensive AlInP surface analysis to date, allowing for more targeted surface and interface engineering, which is crucial for the optimization and design of III‐V heterostructures.